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| ! " #$ %!& %''(%!()* " " + ,-, . / 0 % 1 ) 2+ ! + 1 %+ ! ! ! " #$ %! & ! ! ' #$ (! ) ) $$ ) (! *!+ ! !! % $,- + (. " . % ! #/# $,- + (. " . % " ! $/01 2 3 ! *!+ ! !! * $,- + (. 4"! ( # 3 ( . ' $ 5! 6 ! ! *!+ ! ) ) * * #/#. 2 ! /$/70 ) (! !! ) ) . 2 ! /#$ (! (! !! * $/. # /8 ' ' /8 6! ' ' . % ! /#$0 9: ' . % " ! /#; !"! !#$% forward voltage 0.1 1 10 0 0.4 0.8 1.2 1.6 2 2.4 2.8 D1FL20U tc=150 c [max] tc=25 c [max] pulse measurement per diode tc=150 c [typ] tc=25 c [typ] forward voltage v f [v] forward current i f [a] 0 t p i o t d=t p /t 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0.5 1 1.5 2 D1FL20U 0.3 forward power dissipation tj = tjmax sin 0.2 0.1 d=0.8 dc 0.5 0.05 average rectified forward current i o [a] forward power dissipation p f [w] 0 t p i o t d=t p /t 0 0.5 1 1.5 2 0 20 40 60 80 100 120 140 160 D1FL20U 0.3 derating curve sin 0.2 0.1 d=0.8 dc 0.5 0.05 0 v r v r = v rm ambient temperature ta [ c] average rectified forward current i o [a] alumina substrate soldering land 2mm 2mm conductor layer 20 m substrate thickness 0.64mm 0 t p i o t d=t p /t 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 D1FL20U 0.3 derating curve sin 0.2 0.1 d=0.8 dc 0.5 0.05 0 v r v r = v rm ambient temperature ta [ c] average rectified forward current i o [a] glass-epoxy substrate soldering land 2mm 2mm conductor layer 35 m peak surge forward capability 0 5 10 15 20 25 30 35 1 10 100 D1FL20U 2 5 20 50 i fsm 10ms 10ms 1 cycle number of cycles [cycles] peak surge forward current i fsm [a] non-repetitive, sine wave, tj=25 c before surge current is applied 10 100 D1FL20U 1 10 100 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 junction capacitance reverse voltage v r [v] junction capacitance cj [pf] f=1mhz tl=25 c typ per diode |
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